PART |
Description |
Maker |
GM71C17400 GM71C17400CJ GM71CS17400CL GM71C17400CL |
4,194,304 WORDS x 4 BIT CMOS DYNAMIC RAM 4,194,304 words x 4 bit CMOS dynamic RAM, 60ns 4M X 4 FAST PAGE DRAM, 50 ns, PDSO24 x4 Fast Page Mode DRAM 4M X 4 FAST PAGE DRAM, 60 ns, PDSO24 4Mx4|5V|2K|5/6/7|FP/EDO DRAM - 16M IC REG LDO 1A 12V SHDN TO220FP-5 null4/194/304 WORDS x 4 BIT CMOS DYNAMIC RAM null4,194,304 WORDS x 4 BIT CMOS DYNAMIC RAM 4,194,304 words x 4 bit CMOS dynamic RAM, 50ns 4,194,304 words x 4 bit CMOS dynamic RAM, 70ns
|
Hynix Semiconductor, Inc. Hynix Semiconductor Inc. HYNIX[Hynix Semiconductor]
|
HM514100DLS-6 HM514100DLS-7 HM514100DLS-8 |
4,194,304-word x 1-bit dynamic RAM, 60ns 4,194,304-word x 1-bit dynamic RAM, 70ns 4,194,304-word x 1-bit dynamic RAM, 80ns
|
Hitachi Semiconductor
|
HM51W16400LS-5 HM51W16400LTS-5 HM51W16400S-6 HM51W |
4,194,304-word x 4-bit Dynamic RAM
|
HITACHI[Hitachi Semiconductor]
|
TC5117400BST-70 TC5117400BST-60 TC5117400BSJ |
4,194,304 WORD X 4 BIT DYNAMIC RAM
|
Toshiba Semiconductor
|
M6MGD13TW66CWG-P |
134,217,728-BIT (8,388,608-WORD BY 16-BIT) CMOS FLASH MEMORY & 67,108,864-BIT (4,194,304-WORD BY 16-BIT) CMOS MOBILE RAM 134217728位(8388608字由16位)的CMOS闪存 134,217,728-BIT (8,388,608-WORD BY 16-BIT) CMOS FLASH MEMORY & 67,108,864-BIT (4,194,304-WORD BY 16-BIT) CMOS MOBILE RAM Memory>MCP(Multi Chip Package)>S-CSP(Stacked CSP)
|
Renesas Electronics, Corp. Renesas Electronics Corporation
|
AK58256 |
4,194,304 x 8 Bit CMOS Dynamic Random Access Memory
|
ACCUTEK MICROCIRCUIT CORPORATION
|
MR533252J |
2,097,152-Word X 16-Bit or 4,194,304-Word X 8-Bit 8Word X 16-Bit or 16Word X 8-Bit/Page Mode MASK ROM From old datasheet system
|
OKI
|
AK591024 AK59256 |
4,194,304 Word x 9 Bit CMOS Dynamic Random Access Memory
|
ACCUTEK MICROCIRCUIT CORPORATION http://
|
MSM519200-80TS-K MSM519200 MSM519200-60 MSM519200- |
4,194,304-Word X 2-Bit DYNAMIC RAM : FAST PAGE MODE TYPE
|
OKI[OKI electronic componets]
|
5164405A |
4,194,304-Word ′ 4-Bit Dynamic Random Access Memory From old datasheet system
|
hitachi
|
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